Efficient as-cast thick film small-molecule organic solar cell with less fluorination on the donor
Herein, two donor materials based on fluorine substituted isatin units ( DI3T-1F , DI3T-2F ) were designed and synthesized for thick-film small molecule solar cells. The devices based on DI3T-1F demonstrate balanced charge transport and less trap-assisted recombination, leading to higher power conve...
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Published in | Materials chemistry frontiers Vol. 4; no. 1; pp. 26 - 212 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Royal Society of Chemistry
01.01.2020
|
Subjects | |
Online Access | Get full text |
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Summary: | Herein, two donor materials based on fluorine substituted isatin units (
DI3T-1F
,
DI3T-2F
) were designed and synthesized for thick-film small molecule solar cells. The devices based on
DI3T-1F
demonstrate balanced charge transport and less trap-assisted recombination, leading to higher power conversion efficiency (PCE) of 8.33% with a thickness
ca.
150 nm compared to DI3F-2F (PCE of 7.32% with thick film at
ca.
160 nm) without additives, solvent or thermal annealing treatments. More interestingly, the device based on
DI3T-1F
small molecules demonstrates good tolerance to active layer thickness from 150 to 300 nm with device performance over 5%. Our results indicate that less fluorine atoms on the donor units can optimize the charge transport, and phase-segregated morphology in small molecule solar cells without the need for post-treatment.
Less fluorination, better performance! Devices based on
DI3T-1F
:PC
71
BM and
DI3T-2F
:PC
71
BM are fabricated for thick-film small molecule-solar cells (SMSCs). Indeed, the devices based on
DI3T-1F
the devices based on
DI3T-1F
show a better tolerance to thickness, giving PCE of 8.33% with ∼150 nm, and 5.43% with ∼300 nm, which are 14% and 50% higher than those of
DI3T-2F
, respectively. |
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Bibliography: | Electronic supplementary information (ESI) available. See DOI 10.1039/c9qm00605b |
ISSN: | 2052-1537 2052-1537 |
DOI: | 10.1039/c9qm00605b |