Efficient as-cast thick film small-molecule organic solar cell with less fluorination on the donor

Herein, two donor materials based on fluorine substituted isatin units ( DI3T-1F , DI3T-2F ) were designed and synthesized for thick-film small molecule solar cells. The devices based on DI3T-1F demonstrate balanced charge transport and less trap-assisted recombination, leading to higher power conve...

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Published inMaterials chemistry frontiers Vol. 4; no. 1; pp. 26 - 212
Main Authors Wang, Kai, Song, Xin, Guo, Xiao, Wang, Yunhao, Lai, Xue, Meng, Fei, Du, Mengzhen, Fan, Dongyu, Zhang, Ren, Li, Gongqiang, Kyaw, Aung Ko Ko, Wang, Jianpu, Huang, Wei, Baran, Derya
Format Journal Article
LanguageEnglish
Published London Royal Society of Chemistry 01.01.2020
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Summary:Herein, two donor materials based on fluorine substituted isatin units ( DI3T-1F , DI3T-2F ) were designed and synthesized for thick-film small molecule solar cells. The devices based on DI3T-1F demonstrate balanced charge transport and less trap-assisted recombination, leading to higher power conversion efficiency (PCE) of 8.33% with a thickness ca. 150 nm compared to DI3F-2F (PCE of 7.32% with thick film at ca. 160 nm) without additives, solvent or thermal annealing treatments. More interestingly, the device based on DI3T-1F small molecules demonstrates good tolerance to active layer thickness from 150 to 300 nm with device performance over 5%. Our results indicate that less fluorine atoms on the donor units can optimize the charge transport, and phase-segregated morphology in small molecule solar cells without the need for post-treatment. Less fluorination, better performance! Devices based on DI3T-1F :PC 71 BM and DI3T-2F :PC 71 BM are fabricated for thick-film small molecule-solar cells (SMSCs). Indeed, the devices based on DI3T-1F the devices based on DI3T-1F show a better tolerance to thickness, giving PCE of 8.33% with ∼150 nm, and 5.43% with ∼300 nm, which are 14% and 50% higher than those of DI3T-2F , respectively.
Bibliography:Electronic supplementary information (ESI) available. See DOI
10.1039/c9qm00605b
ISSN:2052-1537
2052-1537
DOI:10.1039/c9qm00605b