Breakdown voltage characteristics of thin oxides and their correlation to defects in the oxide as observed by the EBIC technique

Thin oxides are widely used as the tunneling dielectric in floating gate EEPROM devices and as gate dielectric in short-channel MOS devices. The oxides are required to have high breakdown voltage and low defect density for reliable operation of the devices. With the Electron Beam Induced Current (EB...

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Bibliographic Details
Published inIEEE electron device letters Vol. 7; no. 2; pp. 58 - 60
Main Authors Bhattacharyya, A., Reimer, J.D., Ritz, K.N.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.02.1986
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Breakdown voltage
Capacitors
Dielectric devices
Electric breakdown
Electron beams
Electronics
Exact sciences and technology
Lead compounds
Scanning electron microscopy
Storage and reproduction of information
Transmission electron microscopy
Tunneling
Voltage measurement
Scanning electron microscopy
Correlation
REPROM memory
Disruptive voltage
Memory
Oxides
Crystal defect
MOS capacity
Thin film
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Summary:Thin oxides are widely used as the tunneling dielectric in floating gate EEPROM devices and as gate dielectric in short-channel MOS devices. The oxides are required to have high breakdown voltage and low defect density for reliable operation of the devices. With the Electron Beam Induced Current (EBIC) technique, defects in the oxide which lead to lower values of the oxide breakdown voltage have been observed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26293