A 9-GHz frequency divider using Si bipolar super self-aligned process technology

A very high-speed 1/8 frequency divider is fabricated, using Si bipolar super self-aligned process technology (SST), and tested. The circuit consists of three T-connected D-type master-slave flip-flops and buffers. A low voltage swing (225 mV) differential circuit technique is adopted for the first...

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Bibliographic Details
Published inIEEE electron device letters Vol. 6; no. 4; pp. 181 - 183
Main Authors Suzuki, M., Hagimoto, K., Ichino, H., Konaka, S.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.04.1985
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Circuit properties
Circuits
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Flip-flops
Frequency conversion
Low voltage
Master-slave
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Space technology
Telegraphy
Telephony
Threshold voltage
Transconductance
Integrated circuit
Microwave
Microwave circuit
Frequency divider
Bipolar technology
Transistor
Silicon
Divider
Fast circuit
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Summary:A very high-speed 1/8 frequency divider is fabricated, using Si bipolar super self-aligned process technology (SST), and tested. The circuit consists of three T-connected D-type master-slave flip-flops and buffers. A low voltage swing (225 mV) differential circuit technique is adopted for the first stage T-type flip-flop. The divider is capable of operating at up to 9 GHz with a power dissipation of 554 mW.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1985.26089