Sapphire orientation dependence of the microstructure of ZnO thin film during annealing

Issue Title: Special Issue: ICE-2005 International Conference on Electroceramics The sapphire orientation dependence of the microstructure of ZnO thin films has been studied in real-time synchrotron X-ray scattering experiments. The ZnO films with a 2400-Å-thick were grown on sapphire (001) and sapp...

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Published inJournal of electroceramics Vol. 17; no. 2-4; pp. 231 - 234
Main Authors TAE SIK CHO, YI, Min-Su, JI WOOK JEUNG, DO YOUNG NOH, JIN WOO KIM, JUNG HO JE
Format Conference Proceeding Journal Article
LanguageEnglish
Published Heidelberg Springer 01.12.2006
Springer Nature B.V
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Summary:Issue Title: Special Issue: ICE-2005 International Conference on Electroceramics The sapphire orientation dependence of the microstructure of ZnO thin films has been studied in real-time synchrotron X-ray scattering experiments. The ZnO films with a 2400-Å-thick were grown on sapphire (001) and sapphire (110) substrates at room temperature by radio frequency magnetron sputtering. The as-deposited ZnO film on sapphire (001) has the only (002) crystal grains, while that on sapphire (110) has not only (002) crystal grains but (100) and (101) additional grains. The ZnO films were changed into fully epitaxial ZnO (002) grains both on sapphire (001) and sapphire (110) substrates with increasing the annealing temperature to 600^sup ^C. The epitaxial relationships of the ZnO grains were summarized as ZnO (00l)[100]//sapphire (00l)[110] and ZnO (00l)[110]//sapphire (110)[001].[PUBLICATION ABSTRACT]
Bibliography:ObjectType-Article-2
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ISSN:1385-3449
1573-8663
DOI:10.1007/s10832-006-6994-9