Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications

• Published in: Physica status solidi. A, Applications and materials science Vol. 220; no. 16
• Main Authors: Wu, Jui-Sheng, Weng, You-Chen, Yang, Tsung-Ying, Wu, Chia-Hsun, Lee, Chih-Chieh, Iwai, Hiroshi, Chang, Edward Yi
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.08.2023
• Subjects: AlGaN/GaN; Aluminum gallium nitrides; enhancement mode; ferroelectric charge trap gate stack; Ferroelectric materials; Ferroelectricity; Flash memory (computers); Gallium nitrides; GaN; Heterostructures; High electron mobility transistors; metal-insulator semiconductor (MIS)-HEMT; MIS (semiconductors); Power amplifiers; Semiconductor devices; Switching; threshold voltage stability
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.202300018

Aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure devices have proven to be highly effective for high‐frequency power amplifiers and power switching applications with improved performance compared to those made with traditional silicon technology and other advanced semiconductor technologies. The development of enhancement‐mode (E‐mode) AlGaN/GaN high electron mobility transistors (HEMTs) and metal–insulator–semiconductor HEMTs (MIS‐HEMTs) has been a focus in recent years due to their potential applications. Arising from the concept of a flash‐memory‐like hybrid ferroelectric charge storage structure, the high‐performance hybrid ferroelectric charge storage gate (FEG) GaN HEMT has gradually gained a great deal of attention due to the concept being a useful and versatile tool to realize E‐mode operations. This article attempts to review the latest progresses in this technology, including alternative improvements and device characteristics. Future challenges for the E‐mode FEG‐HEMT are also discussed. The high‐performance ferroelectric charge storage gate (FEG) gallium nitride high‐electron‐mobility transistors (HEMT) has gradually gained attention due to the concept being a useful tool to realize E‐mode operations, which has been a focused topic in recent years for their potential applications. This article attempts to review the latest progress in this technology, including alternative improvements and device characteristics.