Negative Capacitance Transistor with Two‐Dimensional Channel Material (Molybdenum disulfide, MoS2)

• Published in: Physica status solidi. A, Applications and materials science Vol. 216; no. 16
• Main Authors: Choi, Hyunwoo, Shin, Changhwan
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.08.2019
• Subjects: Capacitance; Electrons; Ferroelectric materials; Ferroelectricity; Field effect transistors; metal‐oxide‐semiconductor field‐effect transistor (MOSFET); Molybdenum; Molybdenum disulfide; negative capacitance effect; Semiconductor devices; steep switching devices; Switching; Transistors; transition metal dichalcogenides (TMDCs)
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201900177

Negative capacitance field effect transistor with two‐dimensional channel material (2D‐NCFET) has received lots of attention as a steep switching device for low power application. In this work, a P(VDF0.75‐TrFE0.25) ferroelectric capacitor is connected in series to the gate electrode of baseline FET with two‐dimensional channel material, i.e., molybdenum disulfide (MoS2). With the help of negative capacitance effect in ferroelectric material (herein, notice that the NC effect is physically originated from the polarization switching in ferroelectric material), it is experimentally demonstrated that the 2D‐NCFET enables to achieve the sub‐60 mV/decade subthreshold swing (SS = 32 mV/decade at 300 K). Note that the SS of baseline FET used for the 2D‐NCFET is 110 mV/decade at 300 K. Negative capacitance field effect transistor with two‐dimensional channel material (2D‐NCFET) has received lots of attention as a steep switching device for low power application. In this work, it is experimentally demonstrated that the 2D‐NCFET enables to achieve the sub‐60 mV/decade subthreshold swing (SS = 32 mV/decade at 300 K).