Continuous Wave Terahertz Sensing Using GaN HEMTs

A commercial GaN high electron mobility transistor (HEMT) is investigated as efficient detector of terahertz radiations. Enhancement of the photoresponse in excess of one order of magnitude (up to 1 kV W−1) is obtained when a constant drain‐to‐source current is applied. The photoresponse remains unc...

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 215; no. 11
Main Authors Javadi, Elham, Delgado‐Notario, Juan A., Masoumi, Nasser, Shahabadi, Mahmoud, Velázquez‐Pérez, Jesus E., Meziani, Yahya M.
Format Journal Article
LanguageEnglish
Published Weinheim Wiley Subscription Services, Inc 06.06.2018
Subjects
Continuous radiation
current enhancement
Cutting
Electron mobility
GaN high electron mobility transistor
High electron mobility transistors
imaging
Object recognition
polarization characterization
Semiconductor devices
terahertz response
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Summary:A commercial GaN high electron mobility transistor (HEMT) is investigated as efficient detector of terahertz radiations. Enhancement of the photoresponse in excess of one order of magnitude (up to 1 kV W−1) is obtained when a constant drain‐to‐source current is applied. The photoresponse remains unchanged with chopping frequency up to 5 kHz demonstrating a high‐speed response of GaN HEMT detectors. It is demonstrated that the bounding wires play an important role to couple terahertz radiations to the channel of the device. Terahertz imaging of hidden objects by using GaN HEMTs as a sensor is also demonstrated. GaN high electron mobility transistor (HEMT) is used as an efficient detector of terahertz radiations with good responsivity. Terahertz imaging of hidden objects is obtained using the GaN HEMTs as a sensor. This open the way for new compact terahertz system for inspection and imaging applications.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201700607