Mechanoplastic Tribotronic Floating‐Gate Neuromorphic Transistor

• Published in: Advanced functional materials Vol. 30; no. 34
• Main Authors: Yang, Xixi, Yu, Jinran, Zhao, Jing, Chen, Youhui, Gao, Guoyun, Wang, Yifei, Sun, Qijun, Wang, Zhong Lin
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc 01.08.2020
• Subjects: Artificial intelligence; Artificial neural networks; artificial synapses; CMOS; Complexity; Coordination compounds; floating‐gate transistors; logic switching; Materials science; Mechanical properties; mechanoplasticity; Semiconductor devices; Transistors; triboelectric potential
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.202002506

The emulation of synaptic plasticity to achieve sophisticated cognitive functions and adaptive behaviors is critical to the evolution of neuromorphic computation and artificial intelligence. More feasible plastic strategies (e.g., mechanoplasticity) are urgent to achieve comparable, versatile, and active cognitive complexity in neuromorphic systems. Here, a versatile mechanoplastic artificial synapse based on tribotronic floating‐gate MoS2 synaptic transistors is proposed. Mechanical displacement can induce triboelectric potential coupling to the floating‐gate synaptic transistor, trigger a postsynaptic current signal, and modulate the synaptic weights, which realizes the synaptic mechanoplasticity in an active and interactive way. Typical synaptic plasticity behaviors including potentiation/inhibition and paired pulse facilitation/depression are successfully imitated. Assistant with the charge trapping by floating gate, the artificial synapse can realize mechanical displacement derived short‐term and long‐term plasticity simultaneously. A facile artificial neural network is also constructed to demonstrate an adding synaptic weight and neuromorphic logic switching (AND, OR) by mechanoplasticity without building complex complementary metal oxide semiconductor circuits. The proposed mechanoplastic artificial synapse offers a favorable candidate for the construction of mechanical behavior derived neuromorphic devices to overcome the von Neumann bottleneck and perform advanced synaptic behaviors. A versatile mechanoplastic artificial synapse composed of a floating‐gate MoS2 synaptic transistor integrated with a triboelectric nanogenerator is proposed, which utilizes mechanical displacement to realize synaptic plasticity. Based on the mechanoplastic artificial synapse, typical synaptic plasticity behaviors (potentiation/inhibition and paired pulse facilitation/depression) and artificial neural network are successfully imitated.