A Study on Set Process and Its Influence on Performance of Resistive Switching

In this paper, it has been found that resistive switching (RS) types are dominated by magnitude and polarities of set voltage (Vset). The difference in Vset and its influences on RS behaviors between bipolar and unipolar RS are studied. There are two types of polarity dependence of Vset in devices,...

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 214; no. 11
Main Authors Yan, Hui‐Yu, Li, Zhi‐Qing
Format Journal Article
LanguageEnglish
Published Weinheim Wiley Subscription Services, Inc 01.11.2017
Subjects
Breakdown
Defects
Filaments
Low resistance
oxygen vacancies
Polarity
ReRAM
resistive switching
Switching
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Summary:In this paper, it has been found that resistive switching (RS) types are dominated by magnitude and polarities of set voltage (Vset). The difference in Vset and its influences on RS behaviors between bipolar and unipolar RS are studied. There are two types of polarity dependence of Vset in devices, which comes from the influence of defects on breakdown. The resistances of low resistance state (LRS) of bipolar are much smaller than these of unipolar RS under the same current compliance. The LRS resistances of bipolar RS show complex dependence on Vset. It reveals that the oxygen vacancy (VO) filaments properties and RS types are controlled by the intrinsic properties of breakdown and remnant defects. In this paper, it was found that resistive switching (RS) types are dominated by magnitude and polarities of set voltage (Vset). This figure shows the set voltage distribution for each type of RS with 50 cycles. The black, red, and green columns denote negative unipolar, bipolar, and positive unipolar RS, respectively.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201700546