Electrocatalytic Hydrolysis‐Modulated Multistate Resistive Switching Behaviors in Memristors

Current rapid development of big data, Internet of Things, and artificial intelligence require exponentially higher data storage capacity. The memristor technology, which stores data by controlling resistance states, demonstrates great prospects in resistive random‐access memory (RRAM), synapse cons...

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 218; no. 8
Main Authors Guo, Tao, Sun, Bai, Ranjan, Shubham, Du, Cheng, Joseph Kieffer, Bryce, Philip Mills, Joel, Tong, Yongcheng, Wei, Lan, Norman Zhou, Y., Wu, Yimin A.
Format Journal Article
LanguageEnglish
Published Weinheim Wiley Subscription Services, Inc 01.04.2021
Subjects
Artificial intelligence
Data storage
electrocatalytic hydrolysis
Graphene
Hydrolysis
Internet of Things
Low resistance
mechanism analyses
Memristors
multistates
resistive switching
Storage capacity
Switching
Titanium dioxide
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Summary:Current rapid development of big data, Internet of Things, and artificial intelligence require exponentially higher data storage capacity. The memristor technology, which stores data by controlling resistance states, demonstrates great prospects in resistive random‐access memory (RRAM), synapse construction, and neuromorphic computing. However, traditional memristor devices can only store 1‐bit of data by tuning two separate resistance states, which limits their storage density. Herein, a water‐coupled Ag/TiO2_few‐layer graphene_TiO2/Al memristor is developed as a multibit data storage system. The high and low resistance state ratio (HRS/LRS) increases from 5 to 44 when water is coupled in the device. An electrocatalytic hydrolysis‐modulated resistive switching mechanism is proposed for the physical phenomenon. Herein, not only a multilevel per cell (MLC) storage device is developed, but also a novel electrocatalysis coupling mechanism for memristor technology is provided. Herein, a Ag/TiO2_few‐layer graphene_TiO2/Al memristor is developed to address the insufficiency of data memory. Water induces three separate resistance states due to the evolution of conductive filaments. The model of electrocatalytic hydrolysis modulated resistive switching behaviors is proposed for the physical phenomenon. The results will contribute the development of multilevel per cell (MLC) storage and higher‐density memory applications.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202000655