Hafnium Oxide‐Based Ferroelectric Devices for Computing‐in‐Memory Applications

• Published in: Physica status solidi. A, Applications and materials science Vol. 218; no. 9
• Main Authors: Chen, Pei-Yao, He, Zheng-Yu, Cha, Ming-Yang, Liu, Hao, Zhu, Hao, Chen, Lin, Sun, Qing-Qing, Ding, Shi-Jin, Zhang, David Wei
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.05.2021
• Subjects: aluminum-doped HfO2; Boolean algebra; Computation; computing-in-memory; Data storage; ferroelectric; Ferroelectric materials; Ferroelectricity; Hafnium oxide; Logic circuits; Memory devices; Memristors; nonvolatile; Polarization
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.202000635

Herein, a layer of 10 nm ferroelectric Al‐doped HfO2 (HAO) film is fabricated and optimized and is further integrated in a nonvolatile memory device with TiN/HAO/Pt/Ti capacitor structure. Long retention, high endurance, and stable storage characteristics, as well as a competitive residual polarization of 2Pr = 24–30 μC cm−2 are achieved. Furthermore, computing‐in‐memory applications are implemented utilizing the HAO‐based ferroelectric memory devices. Typical NOR and NOT logic gates are obtained based on the memristor‐aided logic (MAGIC) operations by exploiting the polarization inversion characteristics of the device, which show great potential in realizing other basic Boolean logic operations. The results show that the HAO‐based ferroelectric memory device is a strong candidate in the pursuit of next‐generation parallel storage and computing systems. A Ti/Pt/HfAlO2/TiN memory device with 10 nm Al‐doped HfO2 (HAO) ferroelectric film is reported with large residual polarization and excellent reliability. NOR and NOT calculations are realized utilizing the polarization inversion characteristics. This shows promising potential of the HAO ferroelectric memory as an attractive alternative for next‐generation computing‐in‐memory systems.