Very‐Low‐Temperature Integrated Complementary Graphene‐Barristor‐Based Inverter for Thin‐Film Transistor Applications

• Published in: Annalen der Physik Vol. 530; no. 10
• Main Authors: Heo, Sunwoo, Lee, Ho‐In, Lee, Hyeji, Kim, Seung‐Mo, Kim, Kiyung, Kim, Yun Ji, Kim, So‐Young, Kim, Ji Hwan, Yoon, Myung‐Han, Lee, Byoung Hun
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.10.2018
• Subjects: Display devices; good air stability; Graphene; graphene barristors; High gain; High voltages; Inverters; Low temperature; low‐temperature integration; Power consumption; thin‐film transistors; Transistors; Voltage gain; Zinc oxide
• ISSN: 0003-3804; 1521-3889
• DOI: 10.1002/andp.201800224

Complementary graphene‐barristor‐based inverters using n‐type ZnO:N and p‐type dinaphtho‐[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene semiconductor layers are fabricated at a maximum process temperature lower than 200 °C. The devices display on/off ratios greater than 104. The transmittance of the device stack is higher than 80% at wavelengths larger than 470 nm. The complementary graphene‐barristor inverter exhibits a high gain (>8 at VDD = 2 V) by using a back‐gate structure, which allows for aggressive gate‐dielectric scaling. The potential performance of the inverter, as projected using experimental device parameters, shows that a very high voltage gain of over 70 and a low switching power consumption of below 10 nW can be achieved at VDD = 2 V and an equivalent oxide thickness of 1 nm. These performances are very promising for thin‐film transistor applications. The feasibility of complementary graphene‐barristor‐based inverters fabricated on a transparent substrate for thin‐film transistor applications is examined. The inverter function is demonstrated with a high gain over 8. The maximum process temperature for the entire device fabrication is lower than 200 °C. These properties are competitive when compared with those of other devices being investigated for future display‐driver circuit applications.