Preparation and Characterization of PbO-SrO-Na2O-Nb2O5-SiO2 Glass Ceramics Thin Film for High-Energy Storage Application

• Published in: Journal of electronic materials Vol. 47; no. 5; pp. 2940 - 2944
• Main Authors: Tan, Feihu, Zhang, Qingmeng, Zhao, Hongbin, Wei, Feng, Du, Jun
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2018; Springer Nature B.V
• Subjects: Annealing; Characterization and Evaluation of Materials; Chemistry and Materials Science; Dielectric properties; Dielectric strength; Electronics and Microelectronics; Energy storage; Field strength; Glass ceramics; Heat treatment; Instrumentation; Lead niobates; Materials research; Materials Science; Optical and Electronic Materials; Phase assemblages; Pulsed laser deposition; Silicon dioxide; Silicon substrates; Solid State Physics; Thin films; pulsed laser deposition; energy storage density; Thin film
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-018-6142-8

PbO-SrO-Na 2 O-Nb 2 O 5 -SiO 2 (PSNNS) glass ceramic thin films were prepared by pulsed laser deposition technology on heavily doped silicon substrates. The influence of annealing temperatures on microstructures, dielectric properties and energy storage performances of the as-prepared films were investigated in detail. X-ray diffraction studies indicate that Pb 2 Nb 2 O 7 crystallizes at 800°C and disappears at 900°C, while NaNbO 3 and PbNb 2 O 6 are formed at the higher temperature of 900°C. The dielectric properties of the glass ceramics thin films have a strong dependence on the phase assemblages that are developed during heat treatment. The maximum dielectric constant value of 171 was obtained for the film annealed at 800°C, owing to the high electric breakdown field strength, The energy storage densities of the PSNNS films annealed at 800°C were as large as 36.9 J/cm 3 , These results suggest that PSNNS thin films are promising for energy storage applications.