Monolayer MoS2 epitaxy

• Published in: Nano research Vol. 14; no. 6; pp. 1598 - 1608
• Main Authors: Wei, Zheng, Wang, Qinqin, Li, Lu, Yang, Rong, Zhang, Guangyu
• Format: Journal Article
• Language: English
• Published: Beijing Tsinghua University Press 01.06.2021; Springer Nature B.V
• Subjects: Atomic/Molecular Structure and Spectra; Biomedicine; Biotechnology; Catalysis; Chemical vapor deposition; Chemistry and Materials Science; Condensed Matter Physics; Domains; Energy storage; Epitaxial growth; Epitaxy; Graphene; Laboratories; Materials Science; Molybdenum disulfide; Monolayers; Nanotechnology; Optoelectronics; Organic chemicals; Phase transitions; Polymethyl methacrylate; Review Article; Semiconductor materials; Substrates; Sulfur; monolayer MoS; domain size; heterostructures; domain alignment; epitaxy
• ISSN: 1998-0124; 1998-0000
• DOI: 10.1007/s12274-020-3019-y

As an emerging two-dimensional (2D) semiconductor material, monolayer MoS 2 has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS 2 with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS 2 monolayers. Here, we review the epitaxial growth of monolayer MoS 2 on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology.