Monolayer MoS2 epitaxy
As an emerging two-dimensional (2D) semiconductor material, monolayer MoS 2 has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical ap...
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Published in | Nano research Vol. 14; no. 6; pp. 1598 - 1608 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Beijing
Tsinghua University Press
01.06.2021
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | As an emerging two-dimensional (2D) semiconductor material, monolayer MoS
2
has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS
2
with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS
2
monolayers. Here, we review the epitaxial growth of monolayer MoS
2
on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology. |
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ISSN: | 1998-0124 1998-0000 |
DOI: | 10.1007/s12274-020-3019-y |