Properties of Si-rich SiO2 films by RF magnetron sputtering

• Published in: Journal of crystal growth Vol. 280; no. 3-4; pp. 352 - 356
• Main Authors: HE, Y, BI, L, FENG, J. Y, WU, Q. L
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.07.2005
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; Cadmium; Scanning electron microscopy; 78.55.-m; Inorganic compounds; Films; 81.15.Cd A1. Low-dimensional structures; Photoluminescence; XRD; B2. Semiconducting materials; Preferred orientation; Substrates; Defects; 68.35.Dv; Cathode sputtering; Silicon oxides; Correlations; Transition elements; A3. Physical vapor deposition process; B1. Nanomaterials; Reactive sputtering; Sputter deposition; Nanocrystal; Radiofrequency sputtering
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.03.081

Si-rich silicon oxide (SiOx, 1 < x < 2) films were prepared by RF magnetron reactive sputtering or co-sputtering on the Si(1 1 1) substrates. X-ray diffraction patterns showed that the peak of silicon nanocrystals (NCs), separated from SiO, films, had (1 1 1) preferred orientation. The results of scanning electron microscopy indicated the Si NCs uniting into clusters. We demonstrated that the photoluminescence (PL) peaks at 650 nm was caused by defect center. In particular, we discussed the correlation between the PL and the structure of SiOx films. The mean size of the Si NCs was estimated to be about 3 nm by the PL peak position.