A self-powered solar-blind UV-enhanced Bi2Se3/a-Ga2O3/p-Si heterojunction photodetector for full spectral photoresponse and imaging

Self-powered full-spectrum photodetectors (PDs) offer numerous advantages, such as broad application fields, high precision, efficiency, and multi-functionality, which represent a highly promising and potentially valuable class of detectors for future development. However, insensitive response to so...

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Published inNano research Vol. 17; no. 4; pp. 2960 - 2970
Main Authors Han, Yajie, Jiao, Shujie, Jing, Jiangcheng, Chen, Lei, Rong, Ping, Ren, Shuai, Wang, Dongbo, Gao, Shiyong, Wang, Jinzhong
Format Journal Article
LanguageEnglish
Published Beijing Tsinghua University Press 01.04.2024
Springer Nature B.V
Subjects
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Chemistry and Materials Science
Condensed Matter Physics
Gallium oxides
Heterojunctions
II-VI semiconductors
Low cost
Materials Science
Nanotechnology
Photometers
Photoresponse
Quantum dots
Research Article
Sensitivity
Silicon
Synthesis
Ultraviolet radiation
p-Si
self-powered photodetector
Se
Bi
a-Ga
imaging
O
full spectral photoresponse
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Summary:Self-powered full-spectrum photodetectors (PDs) offer numerous advantages, such as broad application fields, high precision, efficiency, and multi-functionality, which represent a highly promising and potentially valuable class of detectors for future development. However, insensitive response to solar-blind ultraviolet (UV) and complex and expensive preparation processes greatly limit their performance and practical application. In this study, a self-powered full-spectrum Bi 2 Se 3 /a-Ga 2 O 3 /p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented. Experiments results reveal that the developed PD has an excellent performance, such as high sensitivity from 200 to 850 nm, and a responsivity of 1.38 mA/W as well as a detectivity of 3.22 × 10 10 Jones under 254 nm light at zero bias. Additionally, the unencapsulated device displays exceptional stability and imaging capabilities. It is expected that Bi 2 Se 3 /a-Ga 2 O 3 /p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-023-6082-3