Optical characterization of tin containing novel chalcogen rich glassy semiconductors

• Published in: Optical and quantum electronics Vol. 50; no. 2; pp. 1 - 13
• Main Authors: Sharma, Arvind, Mehta, N.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.02.2018; Springer Nature B.V
• Subjects: Absorption spectra; Amorphous materials; Amorphous semiconductors; Band gap; Characterization and Evaluation of Materials; Computer Communication Networks; Electrical Engineering; Energy gap; Glass substrates; Lasers; Metallizing; Optical Devices; Optical properties; Optics; Photonics; Physics; Physics and Astronomy; Refractivity; Spectrum analysis; Structural analysis; Thermodynamic properties; Thin films; Extinction coefficient; Optical band gap; Metallization; Amorphous thin films; Optical absorbance
• ISSN: 0306-8919; 1572-817X
• DOI: 10.1007/s11082-018-1386-3

Amorphous thin film materials with different compositions of Se 80−x Te 20 Sn x (0 ≤ x ≤ 10) system have been deposited on glass substrates by a well known thermal evaporation technique. Structural characterization of different compositions of aforementioned system has been done by Raman spectroscopy. The optical properties of thin films have been studied in the wavelength range 200–1100 nm by the utilization of the optical absorbance spectra of deposited thin films. To calculate the optical band gap from the optical absorption spectra, we have used Tauc model that follows the mechanism of allowed ‘non-direct electronic transition’. Subsequently, we have determined the energy band gap, metallization criterion and refractive index of thin films of aforesaid system. The variation in optical properties with composition has been interpreted in terms of density of defect states.