Structure and Thermoelectric Properties of CoSi-Based Film Composites

The properties of Co–Si thin films grown by the thermal sintering of Co and Si layers are studied. Co and Si layers are produced by chemical vapor deposition. To form cobalt silicide, the obtained two-layer structure is annealed at a temperature of 760 K for 12 h. The thermoelectric properties of th...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 53; no. 6; pp. 775 - 779
Main Authors Kuznetsova, V. S., Novikov, S. V., Nichenametla, C. K., Calvo, J., Wagner-Reetz, M.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.06.2019
Springer Nature B.V
Subjects
2018
Chemical vapor deposition
Cobalt silicide
Magnetic Materials
Magnetism
Multilayers
October 8–12
Organic chemistry
Physics
Physics and Astronomy
Properties (attributes)
Silicon
Thermoelectricity
Thin films
XVI International Conference  “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg
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Summary:The properties of Co–Si thin films grown by the thermal sintering of Co and Si layers are studied. Co and Si layers are produced by chemical vapor deposition. To form cobalt silicide, the obtained two-layer structure is annealed at a temperature of 760 K for 12 h. The thermoelectric properties of the film structure are studied in the temperature range of 300–800 K. The temperature dependences of the thermoelectric power and resistivity, as well as structural data, indicate the formation of a multilayer structure containing layers with excess silicon and cobalt.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619060101