Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal

• Published in: Journal of electronic materials Vol. 47; no. 8; pp. 4239 - 4248
• Main Authors: Mao, Yifei, Zhang, Jijun, Min, Jiahua, Liang, Xiaoyan, Huang, Jian, Tang, Ke, Ling, Liwen, Li, Ming, Zhang, Ying, Wang, Linjun
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.08.2018; Springer Nature B.V
• Subjects: 18th International Conference on II-VI Compounds and Related Materials; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal defects; Crystal growth; Crystallography; Dislocation mobility; Electronics and Microelectronics; Inclusions; Instrumentation; Materials research; Materials Science; Melt temperature; Morphology; Optical and Electronic Materials; Point defects; Solid State Physics; Topical Collection: 18th International Conference on II-VI Compounds; Traveling Heater Method; point defects; CdMnTe; Te inclusions; carrier transport; dislocations
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-018-6117-9

This study establishes a model for describing the interaction between Te inclusions, dislocations and point defects in CdMnTe crystals. The role of the complex environment surrounding the formation of Te inclusions was analyzed. Images of Te inclusions captured by scanning electron microscope and infrared microscope were used to observe the morphology of Te inclusions. The morphology of Te inclusions is discussed in light of crystallography, from the crystal growth temperature at 900°C to the melting temperature of Te inclusions using the traveling heater method. The dislocation nets around Te inclusions were calculated by counting lattice mismatches between the Te inclusions and the bulk CdMnTe at 470°C. The point defects of Te antisites were found to be gathered around Te inclusions, with dislocation climb during the cooling phase of crystal growth from 470°C to room temperature. The Te inclusions, dislocation nets and surrounding point defects are considered to be an entirety for evaluating the effect of Te inclusions on CdMnTe detector performance, and an effective mobility-lifetime product (μτ) was obtained.