Scanning Capacitance Microscopy of Triglycine Sulfate Crystals with the Profile Chromium Distribution

• Published in: Crystallography reports Vol. 63; no. 5; pp. 784 - 790
• Main Authors: Gainutdinov, R. V., Tolstikhina, A. L., Belugina, N. V., Roshchin, B. S., Zolotov, D. A., Asadchikov, V. E., Shut, V. N., Kashevich, I. F., Mozzharov, S. E.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.09.2018; Springer Nature B.V
• Subjects: Capacitance; Chromium; Crystal defects; Crystal growth; Crystal structure; Crystallography and Scattering Methods; Domain walls; Ferroelectric crystals; Ferroelectric materials; Ferroelectricity; Image contrast; Impurities; Ion concentration; Microscopy; Physics; Physics and Astronomy; Surface and Thin Films; Triglycine sulfate; X-ray fluorescence
• ISSN: 1063-7745; 1562-689X
• DOI: 10.1134/S1063774518050115

The spatial capacitance distribution, domain wall configuration, and impurity composition of triglycine sulfate TGS–TGS + Cr crystals with a growth periodic impurity structure have been investigated using scanning capacitance microscopy and X-ray fluorescence and topography. The chromium ion concentration in the strips emerging to the surface has been determined, and the periodic impurity distribution has been established. The difference between the chromium concentrations in nominally pure and impurity strips was found to be ~0.08 wt %, which is reflected in a variation in the capacitance image contrast by 0.17%. It is shown that capacitance images carry information about localization of the impurity gradient regions and domain walls and make it possible to establish a correlation between the defect and domain structures of a ferroelectric crystal.