Effects of oxygen on the RIE characteristics of aluminum films

• Published in: Journal of the Electrochemical Society Vol. 134; no. 4; pp. 1025 - 1027
• Main Authors: ELDRIDGE, J. M, OLIVE, G, LUTHER, B. J, MOORE, J. O, HOLLAND, S. P
• Format: Journal Article
• Language: English
• Published: Pennington, NJ Electrochemical Society 01.04.1987
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microwave and submillimeter wave devices, electron transfer devices; Other techniques and industries; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Microelectronic fabrication; Reactive ion etching; Engraving; Oxygen; Impurity; Aluminium; Thin film

Thin films of Al (99.999) have been prepared on Si substrates with oxygen contents in the 0-10 at.% range. While such contamination did not significantly influence film resistivities, the RIE rates were slowed considerably, with Al films containing approx 3 at.% O taking two to three times longer to...