Effects of oxygen on the RIE characteristics of aluminum films

Thin films of Al (99.999) have been prepared on Si substrates with oxygen contents in the 0-10 at.% range. While such contamination did not significantly influence film resistivities, the RIE rates were slowed considerably, with Al films containing approx 3 at.% O taking two to three times longer to...

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Published inJournal of the Electrochemical Society Vol. 134; no. 4; pp. 1025 - 1027
Main Authors ELDRIDGE, J. M, OLIVE, G, LUTHER, B. J, MOORE, J. O, HOLLAND, S. P
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.04.1987
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microwave and submillimeter wave devices, electron transfer devices
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Microelectronic fabrication
Reactive ion etching
Engraving
Oxygen
Impurity
Aluminium
Thin film
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Summary:Thin films of Al (99.999) have been prepared on Si substrates with oxygen contents in the 0-10 at.% range. While such contamination did not significantly influence film resistivities, the RIE rates were slowed considerably, with Al films containing approx 3 at.% O taking two to three times longer to etch than relatively pure films. These results illustrate the importance of film deposition conditions and resultant purity for the dry etching behavior of metal films, and this interdependence must not be overlooked if viable metal RIE technologies are to be obtained. 7 ref.--AA(UK /US).
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2100560