Effect of copper vanadate sintering aid on the microstructure and dielectric properties of (Zn, Mg)TiO3 ceramics

• Published in: Journal of materials science. Materials in electronics Vol. 27; no. 5; pp. 5462 - 5467
• Main Authors: Liu, Xiangchun, Zuo, Chenguang
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2016; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Materials Science; Optical and Electronic Materials; Microwave Dielectric Property; Dielectric Property; Sinter Temperature; V2O5; Grain Morphology
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-016-4450-4

Copper vanadate compounds (abbreviated to CVO) were synthesized to accelerate the sinterability of (Zn 0.7 Mg 0.3 )TiO 3 ceramics (abbreviated to ZMT). CVO-doped ZMT ceramics were prepared by a conventional mixed-oxide method. The phase structure, morphology and dielectric properties of ceramics were investigated. The results show that ZMT ceramics with 0.2 wt% CVO addition can be well sintered to approach 98 % theoretical density at 950 °C. At the same time, CVO addition inhibits the exaggerated grain growth and improves morphology of ceramics samples effectively. 0.2 wt% CVO doped ZMT ceramics sintered at 950 °C exhibits good microwave dielectric properties of ε r  = 22 and Q  ×  f  = 11,700 GHz. Due to their good dielectric properties, low firing characteristics, 0.2 wt% CVO doped ZMT ceramics can serve as the promising high-frequency dielectric capacitor requiring low sintering temperature.