Modify Cd3As2 nanowires with sulfur to fabricate self-powered NIR photodetectors with enhanced performance

• Published in: Nano research Vol. 14; no. 10; pp. 3379 - 3385
• Main Authors: Yan, Yongxu, Ran, Wenhao, Li, Zhexin, Li, Linlin, Lou, Zheng, Shen, Guozhen
• Format: Journal Article
• Language: English
• Published: Beijing Tsinghua University Press 01.10.2021; Springer Nature B.V
• Subjects: Atomic/Molecular Structure and Spectra; Biomedicine; Biotechnology; Chemistry and Materials Science; Condensed Matter Physics; Materials Science; Metalloids; Nanotechnology; Nanowires; Near infrared radiation; Optoelectronics; Oxidation; Performance enhancement; Photoresponse; Research Article; Sulfur; Cd; As; near-infrared photodetector; nanowires; self-powered; core-shell structure
• ISSN: 1998-0124; 1998-0000
• DOI: 10.1007/s12274-021-3367-2

Cd 3 As 2 nanowires (NWs) have great potential in the near-infrared (NIR) photodetection field due to their excellent optoelectronic properties as a typical Dirac semimetal. However, the existence of surface oxidization limits their photoresponse performance for practical applications. Here, we modified the surface of Cd 3 As 2 NWs with sulfur to prevent surface oxidizing and optimize the bandgap structure to improve the photoresponse performance. The S-modified Cd 3 As 2 samples existed as core/shell Cd 3 As 2 /CdS NWs and the corresponding single NW device showed a responsivity of 0.95 A/W in the NIR band at a 0 V bias, which is three orders of magnitude higher than that of an unmodified NW. This study provides an efficient and universally applicable way to prevent semimetals nanostructures from oxidizing and promote their optoelectronic properties.