The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage

Abstract In this work, the insertion of AlScN ferroelectric gate dielectric on the performance of the AlGaN/GaN HEMT device is investigated. With negative pre-poling on AlScN, the threshold voltage ( V th ) of the device shifts positively with a swing range of 3.26 V. The influence of polarization m...

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Bibliographic Details
Published inApplied physics express Vol. 16; no. 3; pp. 31002 - 31006
Main Authors Zhao, Zihui, Dai, Yijun, Meng, Fanping, Chen, Li, Liu, Kunzi, Luo, Tian, Yu, Zhehan, Wang, Qikun, Yang, Zhenhai, Zhang, Jijun, Guo, Wei, Wu, Liang, Ye, Jichun
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2023
Subjects
ferroelectric material
GaN
HEMT
polarization modulation
threshold voltage
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Summary:Abstract In this work, the insertion of AlScN ferroelectric gate dielectric on the performance of the AlGaN/GaN HEMT device is investigated. With negative pre-poling on AlScN, the threshold voltage ( V th ) of the device shifts positively with a swing range of 3.26 V. The influence of polarization modulation is also reflected by the suppression of gate leakage and the reduction of the subthreshold swing of the device. The AlScN-integrated GaN HEMT exhibits an on/off ratio of 10 6 and a subthreshold swing of 80 mV dec −1 . The depletion mechanism of 2DEG at the AlGaN/GaN interface was well described by a TCAD model.
Bibliography:APEX-107089
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/acbe26