Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
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Published in | Nanotechnology Vol. 22; no. 25; p. 254023 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
24.06.2011
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Online Access | Get full text |
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ISSN: | 0957-4484 1361-6528 |
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DOI: | 10.1088/0957-4484/22/25/254023 |