InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

• Published in: Journal of crystal growth Vol. 304; no. 2; pp. 472 - 475
• Main Authors: FUBAO GAO, NUOFU CHEN, LEI LIU, ZHANG, X. W, JINLIANG WU, ZHIGANG YIN
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 15.06.2007
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Single-crystal and powder diffraction; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Surface and interface electron states; Theory and models of film growth; X-ray diffraction and scattering; Buffer layer; LPE; Epitaxial layers; Crystal orientation; Al. Crystal structure; A3. Liquid-phase epitaxy; B2. Semiconducting III-V materials; Hall effect; XRD; Thin films; Ambient temperature; Rocking curve; Growth mechanism; Electron mobility; 68.55.Jk; 81.15.Lm; 81.05.Ea; Carrier density; III-V semiconductors; Crystal structure
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2007.03.011

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.91Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9X104cm2V-1s-1 and the carrier density is 2.78X1016cm-3 at room temperature (RT). The InAs0.3Sb0.7 films grown on (100) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12mum.