Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons

Degradation of the parameters of 4 H -SiC Schottky diodes after irradiation with 0.9-MeV electrons is studied. A charge-carrier removal rate of 0.07–0.09 cm –1 is determined. The Schottky diodes under investigation are shown to retain rectifying current-voltage characteristics up to doses of ~10 17...

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Bibliographic Details
Published inSurface investigation, x-ray, synchrotron and neutron techniques Vol. 11; no. 5; pp. 924 - 926
Main Authors Lebedev, A. A., Davydovskaya, K. S., Strelchuk, A. M., Kozlovski, V. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.09.2017
Springer Nature B.V
Subjects
Chemistry and Materials Science
Current carriers
Current voltage characteristics
Irradiation
Materials Science
Radiation tolerance
Schottky diodes
Silicon carbide
Surfaces and Interfaces
Thin Films
Schottky diodes
electron irradiation
silicon carbide
charge-carrier removal rate
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Summary:Degradation of the parameters of 4 H -SiC Schottky diodes after irradiation with 0.9-MeV electrons is studied. A charge-carrier removal rate of 0.07–0.09 cm –1 is determined. The Schottky diodes under investigation are shown to retain rectifying current-voltage characteristics up to doses of ~10 17 cm –2 . The radiation resistance of SiC Schottky diodes is found to be much greater than that of Si p–i–n -diodes with the same breakdown voltage.
ISSN:1027-4510
1819-7094
DOI:10.1134/S102745101705010X