Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS–Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications
A novel quantum-dot-co-sensitized PbS–Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterize...
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Published in | Applied physics. A, Materials science & processing Vol. 123; no. 8; pp. 1 - 12 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Berlin/Heidelberg
Springer Berlin Heidelberg
01.08.2017
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | A novel quantum-dot-co-sensitized PbS–Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV–Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS–Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm
2
is achieved with PbS–Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. |
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ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-017-1116-x |