Investigation of Power Transistor Parameters for Designing High-Frequency High-Voltage Nanosecond Switches

— The efficiency of power transistors in composite high-voltage switches is analyzed. A high-voltage pulse generator capable of generating a periodic voltage signal with a rectangular shape, an amplitude as high as 16 kV, a current greater than 40 A, and a repetition rate of up to 100 kHz has been d...

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Bibliographic Details
Published inInstruments and experimental techniques (New York) Vol. 61; no. 6; pp. 821 - 826
Main Authors Moshkunov, S. I., Rebrov, I. E., Khomich, V. Yu, Shershunova, E. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.11.2018
Springer Nature B.V
Subjects
Electric potential
Electrical Engineering
Electronics and Radio Engineering
High voltages
Measurement Science and Instrumentation
Physical Chemistry
Physics
Physics and Astronomy
Power efficiency
Power semiconductor devices
Pulse generators
Semiconductor devices
Switches
Power Transistors
High Voltage Switch
Blocking Voltage
Insulated Gate Bipolar Transistor (IGBTs)
Periodic Voltage Signal
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Summary:— The efficiency of power transistors in composite high-voltage switches is analyzed. A high-voltage pulse generator capable of generating a periodic voltage signal with a rectangular shape, an amplitude as high as 16 kV, a current greater than 40 A, and a repetition rate of up to 100 kHz has been developed.
ISSN:0020-4412
1608-3180
DOI:10.1134/S0020441218050214