HgCdTe dual-band infrared photodiodes grown by molecular beam epitaxy

We report the demonstration of an all molecular beam epitaxy HgCdTe bias-selectable dual-band infrared photodetector. The mesa device, an n-p-n three layer HgCdTe heterostructure, was in situ doped with arsenic and indium for p- and n-type doping. The device design is similar to a heterostructure fl...

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Bibliographic Details
Published inJournal of applied physics Vol. 70; no. 8; pp. 4620 - 4622
Main Authors ARIAS, J. M, ZANDIAN, M, WILLIAMS, G. M, BLAZEJEWSKI, E. R, DEWAMES, R. E, PASKO, J. G
Format Journal Article
LanguageEnglish
Published Woodbury, NY American Institute of Physics 15.10.1991
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Voltage current curve
Cadmium Mercury Tellurium Mixed
Epitaxy
Transistor
Molecular beam
Photodiode
Photodetector
Heterojunction
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Summary:We report the demonstration of an all molecular beam epitaxy HgCdTe bias-selectable dual-band infrared photodetector. The mesa device, an n-p-n three layer HgCdTe heterostructure, was in situ doped with arsenic and indium for p- and n-type doping. The device design is similar to a heterostructure floating base transistor. The feasibility of the two-color bias-switchable detector was demonstrated by obtaining backside illuminated spectrally pure dual-band detection at 77 K. Wavelength cutoff (λco) selection to 5.2 μm with 60% quantum efficiency (QE) was obtained by applying a negative bias of −250 meV, and to λco=7.9 μm with 36% QE by applying a positive bias of 250 meV. The current-voltage characteristics of this device can be described in terms of a simple back-to-back diode model.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.349099