Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

• Published in: Nano research Vol. 17; no. 3; pp. 1886 - 1892
• Main Authors: Gao, Xinzhu, Chen, Quan, Qin, Qinggang, Li, Liang, Liu, Meizhuang, Hao, Derek, Li, Junjie, Li, Jingbo, Wang, Zhongchang, Chen, Zuxin
• Format: Journal Article
• Language: English
• Published: Beijing Tsinghua University Press 01.03.2024
• Subjects: Atomic/Molecular Structure and Spectra; Biomedicine; Biotechnology; Chemistry and Materials Science; Condensed Matter Physics; Ferroelectric materials; Ferroelectricity; Ferroelectrics; Heterostructures; Logic; Materials Science; Nanotechnology; Optics; Research Article; Thiophosphate; Transistors; Tungsten; Tungsten disulfide; tri-gate; in-memory computing; two-dimensional (2D) ferroelectric; heterostructure; polymorphic regulation

Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor devices. Here, we rationally design a tri-gate two-dimensional (2D) ferroelectric van der Waals heterostructures device based on copper indium thiophosphate...