Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

• Published in: Nano research Vol. 17; no. 3; pp. 1886 - 1892
• Main Authors: Gao, Xinzhu, Chen, Quan, Qin, Qinggang, Li, Liang, Liu, Meizhuang, Hao, Derek, Li, Junjie, Li, Jingbo, Wang, Zhongchang, Chen, Zuxin
• Format: Journal Article
• Language: English
• Published: Beijing Tsinghua University Press 01.03.2024
• Subjects: Atomic/Molecular Structure and Spectra; Biomedicine; Biotechnology; Chemistry and Materials Science; Condensed Matter Physics; Ferroelectric materials; Ferroelectricity; Ferroelectrics; Heterostructures; Logic; Materials Science; Nanotechnology; Optics; Research Article; Thiophosphate; Transistors; Tungsten; Tungsten disulfide; tri-gate; in-memory computing; two-dimensional (2D) ferroelectric; heterostructure; polymorphic regulation
• ISSN: 1998-0124; 1998-0000
• DOI: 10.1007/s12274-023-5964-8

Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor devices. Here, we rationally design a tri-gate two-dimensional (2D) ferroelectric van der Waals heterostructures device based on copper indium thiophosphate (CuInP 2 S 6 ) and few layers tungsten disulfide (WS 2 ), and demonstrate its multi-functional applications in multi-valued state of data, non-volatile storage, and logic operation. By co-regulating the input signals across the tri-gate, we show that the device can switch functions flexibly at a low supply voltage of 6 V, giving rise to an ultra-high current switching ratio of 10 7 and a low subthreshold swing of 53.9 mV/dec. These findings offer perspectives in designing smart 2D devices with excellent functions based on ferroelectric van der Waals heterostructures.