Silicon carbide and graphene based UV-IR dual-color detector

• Published in: Optoelectronics letters Vol. 15; no. 3; pp. 170 - 173
• Main Authors: Zeng, Chun-hong, Lin, Wen-kui, Sun, Yu-hua, Cui, Qi, Zhang, Xuan, Li, Shao-juan, Zhang, Bao-shun, Kong, Mei
• Format: Journal Article
• Language: English
• Published: Tianjin Tianjin University of Technology 01.05.2019; Springer Nature B.V
• Subjects: Bias; C band; Color; Electric potential; Graphene; Infrared detectors; Lasers; Optical Devices; Optics; Photonics; Physics; Physics and Astronomy; Sensors; Silicon carbide; Spectral sensitivity; Ultraviolet detectors; A
• ISSN: 1673-1905; 1993-5013
• DOI: 10.1007/s11801-019-8154-x

An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical integration of single-layer graphene and a 4H-SiC layer by semiconductor micro-fabrication technology. The spectral response characteristics of the detector are analyzed. The ultraviolet response range is 208–356 nm with a responsivity larger than 0.4 mA/W and the infrared response range is 1.016–1.17 μm with a responsivity larger than 0.4 mA/W at room temperature and 5 V bias voltage. The peak responsivity of the graphene in the ultraviolet-C band at 232 nm is 0.73 mA/W and in the near infrared band at 1.148 μ m is 0.64 mA/W. The peak responsivity of SiC layer in the ultraviolet-B band at 312 nm is 2.27 mA/W. Besides, the responsivity increases with the bias voltage.