Mechanisms of reactive sputtering of titanium nitride and titanium carbide II: Morphology and structure

• Published in: Thin solid films Vol. 105; no. 4; pp. 367 - 384
• Main Authors: Sundgren, J.-E., Johansson, B.-O., Karlsson, S.-E., Hentzell, H.T.G.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 29.07.1983
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(83)90319-X

Titanium was reactively r.f. sputtered in mixed ArN 2 and ArCH 4 discharges onto substrates held at 775 K. The films obtained were characterized by scanning electron microscopy and X-ray diffraction and through measurements of the microhardness and electrical resistivity. The composition of the films was determined by Auger electron spectroscopy. The measurements show that the morphology of the deposits to a large extent influences the properties of the films obtained. For TiN coatings the electrical resistivity reaches the bulk resistivity only if coatings with the full bulk density are obtained. The difference observed in the lattice parameter for TiN thin film and bulk samples is explained using a grain boundary relaxation model. It is also shown that the heat of formation of the compounds plays an important role in the formation of carbide and nitride films. A high heat of formation promotes the development of large grains and dense structures.