Effect of Ce doping on crystalline orientation, microstructure, dielectric and ferroelectric properties of (100)-oriented PCZT thin films via sol–gel method

• Published in: Journal of materials science. Materials in electronics Vol. 29; no. 21; pp. 18668 - 18673
• Main Authors: Wang, Fuan, Zhou, Jiangang, Wang, Xing, Chen, Da, Wang, Qiusen, Dou, Jiao, Li, Qi, Zou, Helin
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.11.2018; Springer Nature B.V
• Subjects: Cerium; Characterization and Evaluation of Materials; Chemistry and Materials Science; Columnar structure; Crystal structure; Crystallinity; Dielectric properties; Doped films; Doping; Electric properties; Ferroelectric materials; Ferroelectricity; Materials Science; Microstructure; Optical and Electronic Materials; Perovskite structure; Perovskites; Scanning electron microscopy; Silicon dioxide; Silicon substrates; Sol-gel processes; Thickness; Thin films
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-018-9989-9

Pb 1.2−x Ce x Zr 0.52 Ti 0.48 O 3 (PCZT, x = 0%, 0.1%, 0.5%, 1%, 2% and 3%) thin films with the thickness of about 1 µm were fabricated by sol–gel process and traditional annealing process on Pt/Ti/SiO 2 /Si substrates to investigate the effect of cerium doping on crystalline orientation, microstructure and electric properties of the samples. (100)-oriented Pb 1.2−x Ce x Zr 0.52 Ti 0.48 O 3 films were obtained for all x values. The results of Scanning electron microscopy (SEM) revealed that the 0%, 0.1%, 0.5%, and 1% cerium doped Pb 1.2−x Ce x Zr 0.52 Ti 0.48 O 3 films have a dense columnar perovskite structure. The maximum dielectric constant and remnant polarization were obtained for 0.1% Ce-doped film.