Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 53; no. 9; pp. 1242 - 1245
• Main Authors: Sushkov, A. A., Pavlov, D. A., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Baidus, N. V., Rykov, A. V., Kryukov, R. N.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.09.2019; Springer Nature B.V
• Subjects: 2019; Aluminum oxide; Buffer layers; Crystal growth; Energy transmission; Epitaxial growth; Gallium arsenide; Germanium; Heterostructures; Magnetic Materials; Magnetism; March 11–14; Metalorganic chemical vapor deposition; Microscopes; Nizhny Novgorod; Photoluminescence; Physics; Physics and Astronomy; Silicon substrates; Single crystals; Spectroscopic analysis; Spectrum analysis; Vapor phase epitaxy; Xxiii International Symposium “Nanophysics and Nanoelectronics”; heteroepitaxy; sapphire substrate; transmission electron microscopy; photoluminescence spectra; GaAs layer
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782619090227

A GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al 2 O 3 (1 02) substrate is formed and studied. The Ge buffer layer is produced by the “hot wire” technique, whereas the III–V layers are grown by metal–organic vapor-phase epitaxy. The optical quality of the III–V layers is determined by photoluminescence spectroscopy. Structural studies are performed by high-resolution transmission electron microscopy. The elemental composition is determined by energy-dispersive X-ray spectroscopy. In the study, the possibility of growing a single-crystal GaAs layer on a Si/Al 2 O 3 substrate through AlAs/GaAs/AlAs/Ge buffer layers is shown.