Phase Composition and Surface Morphology of Thin AlN Films Obtained trough Magnetron Sputtering

Aluminum nitride films have been obtained through magnetron sputtering of an aluminum target in an argon and nitrogen atmosphere on silicon and citall substrates. The study shows the effects of substrate temperature, nitrogen concentration, chamber pressure and sputtering power on the elemental comp...

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Bibliographic Details
Published inHigh energy chemistry Vol. 57; no. Suppl 1; pp. S7 - S10
Main Authors Baranova, L. V., Strunin, V. I., Baysova, B. T., Chirikov, N. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.10.2023
Springer Nature B.V
Subjects
Aluminum nitride
Argon
Chambers
Chemistry
Chemistry and Materials Science
Magnetron sputtering
Morphology
Nitrogen
Phase composition
Physical Chemistry
Silicon substrates
Thin films
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Summary:Aluminum nitride films have been obtained through magnetron sputtering of an aluminum target in an argon and nitrogen atmosphere on silicon and citall substrates. The study shows the effects of substrate temperature, nitrogen concentration, chamber pressure and sputtering power on the elemental composition of AlN films and surface morphology. The study has found that the Al/N ratio increases with the rising pressure in the chamber. The ratio decreases with rising substrate temperature and increasing power dissipated in the target. It has been proved that the roughness of the films increases with increasing discharge power, the operating pressure and the substrate temperature.
ISSN:0018-1439
1608-3148
DOI:10.1134/S0018143923070056