Modeling and designing a new gas injection diffusion system for metalorganic chemical vapor deposition

• Published in: Heat and mass transfer Vol. 54; no. 1; pp. 115 - 123
• Main Authors: Liao, C. C., Hsiau, S. S., Chuang, T. C.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 2018; Springer Nature B.V
• Subjects: Barriers; Chemical vapor deposition; Computer simulation; Engineering; Engineering Thermodynamics; Epitaxial growth; Gas injection; Gases; Heat and Mass Transfer; Inclination angle; Industrial Chemistry/Chemical Engineering; Light emitting diodes; Mathematical models; Metalorganic chemical vapor deposition; Original; Reservoirs; Thermodynamics
• ISSN: 0947-7411; 1432-1181
• DOI: 10.1007/s00231-017-2110-8

Metalorganic chemical vapor deposition (MOCVD) is a critical process and is widely used for the epitaxial growth of light-emitting diode (LED) wafers. The key component, a gas injection system, delivers the gas into the reactor by using a nozzle or showerhead. In this paper, the numerical simulation method was applied to investigate the thermal fluid field and to design a new gas injection system for MOCVD. In this study, we developed a new gas injection system with inlet barriers. The inlet barriers can separate the various reactive gases, reduce the prereaction, and prevent adducted particles from forming and blocking the inlet gas system. The barrier geometry, including the barrier length, the barrier inclination angle, and the V/III precursor ratio was systematically studied to determine the optimal design conditions. Higher growth rate and improved uniformity were demonstrated using the new optimal gas inlet barrier design.