Investigation of positive bias temperature instability for monolayer polycrystalline MoS2 field-effect transistors

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Bibliographic Details
Published inScience China. Physics, mechanics & astronomy Vol. 63; no. 1; p. 217322
Main Authors Yang, GuanHua, Wang, JiaWei, Niu, JieBin, Chuai, XiChen, Lu, CongYan, Geng, Di, Lu, NianDuan, Li, Ling, Liu, Ming
Format Journal Article
LanguageEnglish
Published Beijing Science China Press 2020
Springer Nature B.V
Subjects
Astronomy
Classical and Continuum Physics
Field effect transistors
Letter to the Editor
Observations and Techniques
Physics
Physics and Astronomy
Semiconductor devices
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ISSN:1674-7348
1869-1927
DOI:10.1007/s11433-019-9400-2