Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

• Published in: Technical physics letters Vol. 44; no. 1; pp. 81 - 83
• Main Authors: Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 2018; Springer Nature B.V
• Subjects: Aluminum nitride; Classical and Continuum Physics; Epitaxial growth; Nucleation; Physics; Physics and Astronomy; Pretreatment; Regular Papers; Silicon; Silicon substrates; Single crystals; Vapor phase epitaxy

We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH 4 ) 2 S aqueous sol...