Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH 4 ) 2 S aqueous sol...

Full description

Saved in:
Bibliographic Details
Published inTechnical physics letters Vol. 44; no. 1; pp. 81 - 83
Main Authors Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 2018
Springer Nature B.V
Subjects
Aluminum nitride
Classical and Continuum Physics
Epitaxial growth
Nucleation
Physics
Physics and Astronomy
Pretreatment
Regular Papers
Silicon
Silicon substrates
Single crystals
Vapor phase epitaxy
Online AccessGet full text

Cover

More Information
Summary:We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH 4 ) 2 S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30° relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.
ISSN:1063-7850
1090-6533
DOI:10.1134/S106378501801011X