A New Type of Charge-Density-Wave Pinning in Orthorhombic TaS3 Crystals with Quenching Defects

• Published in: JETP letters Vol. 110; no. 1; pp. 62 - 67
• Main Authors: Minakova, V. E., Nikitina, A. M., Zaitsev-Zotov, S. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.07.2019; Springer Nature B.V
• Subjects: Atomic; Biological and Medical Physics; Biophysics; Charge density waves; Condensed Matter; Conductors; Crystal defects; Dislocations; Molecular; Optical and Plasma Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Pinning; Point defects; Quantum Information Technology; Quenching; Solid State Physics; Spintronics; Strong interactions (field theory); Thermal cycling; Transition temperature
• ISSN: 0021-3640; 1090-6487
• DOI: 10.1134/S0021364019130034

Diminishing in the concentration of quenching defects during thermocycling of orthorhombic TaS 3 samples in the temperature range below the Peierls transition temperature T < T P is observed. It makes it possible to study the character of pinning of the charge density wave by these defects. A number of fundamental differences from pinning by ordinary local pinning centers—impurities and point defects—have been found. We conclude that quenching defects are extended (non-local) objects (presumably, dislocations) that can diffuse from the crystal during low-temperature thermocycling due to their strong interaction with the charge density wave, which is intrinsic for Peierls conductors. The presence of these defects leads to a previously unknown non-local type of the charge-density-wave pinning that acts on T P and the threshold field for the onset of charge-density-wave sliding, E T , differently in comparison with the local pinning centers.