Interface traps contribution on transport mechanisms under illumination in metal–oxide–semiconductor structures based on silicon nanocrystals

• Published in: Applied physics. A, Materials science & processing Vol. 124; no. 2; pp. 1 - 9
• Main Authors: Chatbouri, S., Troudi, M., Kalboussi, A., Souifi, A.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.02.2018; Springer Nature B.V
• Subjects: Applied physics; Characterization and Evaluation of Materials; Charge transport; Condensed Matter Physics; Current carriers; Electric potential; Electron traps; Energy levels; Illumination; Light; Machines; Manufacturing; Materials science; Metal oxide semiconductors; Nanocrystals; Nanotechnology; Optical and Electronic Materials; Photoexcitation; Physics; Physics and Astronomy; Processes; Silicon substrates; Surfaces and Interfaces; Thin Films; Transport phenomena; Trapping
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-017-1533-x

The transport phenomena in metal–oxide–semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current–voltage ( I – V ), and high frequency capacitance–voltage ( C – V ) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I – V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity’s values for the C – V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.