Optimization of magnetodielectric coupling in Mn substituted BiFeO3 for potential memory devices

• Published in: Journal of materials science. Materials in electronics Vol. 29; no. 14; pp. 11812 - 11823
• Main Authors: Khan, Ali Haider, Atiq, Shahid, Anwar, M. Sabieh, Naseem, Shahzad, Abbas, Syed Kumail
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.07.2018; Springer Nature B.V
• Subjects: Bismuth ferrite; Characterization and Evaluation of Materials; Chelating agents; Chemistry and Materials Science; Coupling; Data storage; Electronic devices; Field emission; Information technology; Magnetic fields; Materials Science; Materials substitution; Memory devices; Morphology; Multiferroic materials; Nitrates; Optical and Electronic Materials; Optimization; Order parameters; Phase transitions; Scientists; Sol-gel processes; Spectrum analysis; X-ray diffraction
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-018-9281-z

Coexistence of spontaneous magnetization and polarization is a key phenomenon in multiferroic materials whereas coupling among these order parameters is anticipated to play a vital role in modern day engineering devices and information technology. In this context, Mn substituted BiFeO 3 was synthesized using sol–gel accompanying auto-combustion method. X-ray diffraction of the calcined BiFe 1−x Mn x O 3 samples exhibited a crystalline nature and phase purity of the samples. Among the samples, BiFe 0.8 Mn 0.2 O 3 depicted more stable rhombohedral structure as compared to BiFeO 3 , whereas mixed phases of orthorhombic and monoclinic were observed in BiFe 1−x Mn x O 3 at 0.4 ≤ x ≤ 1.0. Surface morphology, as seen using a field emission electron microscope, revealed decreasing granular size which interpreted modified magnetic attributes examined by vibrating sample magnetometer for specific Mn contents. Elemental wt% were confirmed by energy dispersive X-ray spectroscopy. To extract the optimized results from Mn substituted BiFeO 3 , magnetodielectric coupling was examined as well under 6 kOe applied magnetic field which declared BiFe 0.8 Mn 0.2 O 3 as the most optimized composition. Hence, this research work has opened the way for the material scientists and engineers to pursue more efficient multiferroics. It is an effective way to rectify various issues relevant to device applications like quick switching, magnetically controlled supercapacitors and designing fast and higher density data storage devices that is magnetoelectric random-access memories.