Effects of Al doping on the responsivity of solar irradiation of devices that use ZnO nanoparticles

• Published in: Journal of materials science. Materials in electronics Vol. 28; no. 14; pp. 10205 - 10211
• Main Authors: Lin, Yow-Jon, Chen, Yao-Ming
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.07.2017; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Doping; Irradiation; Lattice vacancies; Materials Science; Nanoparticles; Optical and Electronic Materials; Photocatalysis; Photoelectric effect; Photoelectric emission; Photovoltaic cells; Response time; Zinc oxide; Light Switching; High Responsivity; Solar Illumination; Oxygen Vacancy; Simulated Sunlight

The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (V O ) and th...