Effects of Al doping on the responsivity of solar irradiation of devices that use ZnO nanoparticles

The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (V O ) and th...

Full description

Saved in:
Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 28; no. 14; pp. 10205 - 10211
Main Authors Lin, Yow-Jon, Chen, Yao-Ming
Format Journal Article
LanguageEnglish
Published New York Springer US 01.07.2017
Springer Nature B.V
Subjects
Characterization and Evaluation of Materials
Chemistry and Materials Science
Doping
Irradiation
Lattice vacancies
Materials Science
Nanoparticles
Optical and Electronic Materials
Photocatalysis
Photoelectric effect
Photoelectric emission
Photovoltaic cells
Response time
Zinc oxide
Light Switching
High Responsivity
Solar Illumination
Oxygen Vacancy
Simulated Sunlight
Online AccessGet full text

Cover

More Information
Summary:The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (V O ) and the introduction of Al-ions into the lattice of ZnO. Al-doped ZnO nanoparticles are responsive because there is an increase in the visible-emission absorption. A correlation between the incorporation of Al, the V O density and the photocurrent is determined, which allows the sensitivity of ZnO nanoparticles to solar irradiation to be tuned.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-017-6786-9