Effects of Al doping on the responsivity of solar irradiation of devices that use ZnO nanoparticles

The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (V O ) and th...

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Published in	Journal of materials science. Materials in electronics Vol. 28; no. 14; pp. 10205 - 10211
Main Authors	Lin, Yow-Jon, Chen, Yao-Ming
Format	Journal Article
Language	English
Published	New York Springer US 01.07.2017 Springer Nature B.V
Subjects	Characterization and Evaluation of Materials Chemistry and Materials Science Doping Irradiation Lattice vacancies Materials Science Nanoparticles Optical and Electronic Materials Photocatalysis Photoelectric effect Photoelectric emission Photovoltaic cells Response time Zinc oxide Light Switching High Responsivity Solar Illumination Oxygen Vacancy Simulated Sunlight
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Abstract	The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (V O ) and the introduction of Al-ions into the lattice of ZnO. Al-doped ZnO nanoparticles are responsive because there is an increase in the visible-emission absorption. A correlation between the incorporation of Al, the V O density and the photocurrent is determined, which allows the sensitivity of ZnO nanoparticles to solar irradiation to be tuned.
AbstractList	The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (VO) and the introduction of Al-ions into the lattice of ZnO. Al-doped ZnO nanoparticles are responsive because there is an increase in the visible-emission absorption. A correlation between the incorporation of Al, the VO density and the photocurrent is determined, which allows the sensitivity of ZnO nanoparticles to solar irradiation to be tuned. The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (V O ) and the introduction of Al-ions into the lattice of ZnO. Al-doped ZnO nanoparticles are responsive because there is an increase in the visible-emission absorption. A correlation between the incorporation of Al, the V O density and the photocurrent is determined, which allows the sensitivity of ZnO nanoparticles to solar irradiation to be tuned.
Author	Lin, Yow-Jon Chen, Yao-Ming
Author_xml	– sequence: 1 givenname: Yow-Jon surname: Lin fullname: Lin, Yow-Jon email: rzr2390@yahoo.com.tw organization: Institute of Photonics, National Changhua University of Education – sequence: 2 givenname: Yao-Ming surname: Chen fullname: Chen, Yao-Ming organization: Institute of Photonics, National Changhua University of Education
BookMark	eNp1kMtKAzEUQINUsK1-gLuA69Ekk-eylPqAQjcK4iakmUxNGZMxmRb696aMCzeuLlzOuRfODExCDA6AW4zuMULiIWMkGa0QFhUXklfqAkwxE3VFJXmfgClSTFSUEXIFZjnvEUKc1nIK7KptnR0yjC1cdLCJvQ87GAMcPh1MLvcxZH_0w-kM5NiZBH1KpvFm8IUqy8YdvXW5CGaAh-zgR9jAYELsTRq87Vy-Bpet6bK7-Z1z8Pa4el0-V-vN08tysa5sjflQMYuRYYq0ztR4q7hsTGsVFcpSidmWGMytrRlnHAvOKLFFMJIIxBVtJGX1HNyNd_sUvw8uD3ofDymUlxorSQopa1EoPFI2xZyTa3Wf_JdJJ42RPrfUY0tdWupzS62KQ0YnFzbsXPpz-V_pB3k3eHE
CitedBy_id	crossref_primary_10_1016_j_ijleo_2017_11_012 crossref_primary_10_1016_j_radphyschem_2019_108416 crossref_primary_10_1016_j_ijleo_2017_05_068
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ContentType	Journal Article
Copyright	Springer Science+Business Media New York 2017 Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2017). All Rights Reserved.
Copyright_xml	– notice: Springer Science+Business Media New York 2017 – notice: Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2017). All Rights Reserved.
DBID	AAYXX CITATION 7SP 7SR 8BQ 8FD 8FE 8FG ABJCF AFKRA ARAPS BENPR BGLVJ CCPQU D1I DWQXO F28 FR3 HCIFZ JG9 KB. L7M P5Z P62 PDBOC PQEST PQQKQ PQUKI S0W
DOI	10.1007/s10854-017-6786-9
DatabaseName	CrossRef Electronics & Communications Abstracts Engineered Materials Abstracts METADEX Technology Research Database ProQuest SciTech Collection ProQuest Technology Collection Materials Science & Engineering Collection ProQuest Central UK/Ireland Advanced Technologies & Aerospace Collection AUTh Library subscriptions: ProQuest Central Technology Collection ProQuest One Community College ProQuest Materials Science Collection ProQuest Central ANTE: Abstracts in New Technology & Engineering Engineering Research Database SciTech Premium Collection (Proquest) (PQ_SDU_P3) Materials Research Database ProQuest Materials Science Database Advanced Technologies Database with Aerospace ProQuest Advanced Technologies & Aerospace Database ProQuest Advanced Technologies & Aerospace Collection Materials Science Collection ProQuest One Academic Eastern Edition (DO NOT USE) ProQuest One Academic ProQuest One Academic UKI Edition DELNET Engineering & Technology Collection
DatabaseTitle	CrossRef Materials Research Database Technology Collection Technology Research Database ProQuest Advanced Technologies & Aerospace Collection Materials Science Collection SciTech Premium Collection ProQuest One Community College ProQuest Central Engineered Materials Abstracts ProQuest Central Korea Materials Science Database Advanced Technologies Database with Aerospace ANTE: Abstracts in New Technology & Engineering ProQuest Materials Science Collection Advanced Technologies & Aerospace Collection ProQuest One Academic Eastern Edition Electronics & Communications Abstracts ProQuest Technology Collection ProQuest SciTech Collection METADEX Advanced Technologies & Aerospace Database ProQuest One Academic UKI Edition ProQuest DELNET Engineering and Technology Collection Materials Science & Engineering Collection Engineering Research Database ProQuest One Academic
DatabaseTitleList	Materials Research Database
Database_xml	– sequence: 1 dbid: 8FG name: ProQuest Technology Collection url: https://search.proquest.com/technologycollection1 sourceTypes: Aggregation Database
DeliveryMethod	fulltext_linktorsrc
Discipline	Engineering
EISSN	1573-482X
EndPage	10211
ExternalDocumentID	10_1007_s10854_017_6786_9
GrantInformation_xml	– fundername: Ministry of Science and Technology, Taiwan grantid: 100-2112-M-018-003-MY3 funderid: http://dx.doi.org/10.13039/501100004663
GroupedDBID	-4Y -58 -5G -BR -EM -Y2 -~C -~X .4S .86 .DC .VR 06C 06D 0R~ 0VY 199 1N0 1SB 2.D 203 28- 29L 2J2 2JN 2JY 2KG 2KM 2LR 2P1 2VQ 2~H 30V 4.4 406 408 409 40D 40E 5GY 5QI 5VS 67Z 6NX 78A 8FE 8FG 8UJ 95- 95. 95~ 96X AAAVM AABHQ AABYN AAFGU AAGCJ AAHNG AAIAL AAIKT AAJKR AANZL AARHV AARTL AATNV AATVU AAUCO AAUYE AAWCG AAYFA AAYIU AAYQN AAYTO ABBBX ABBXA ABDZT ABECU ABFGW ABFTD ABFTV ABHLI ABHQN ABJCF ABJNI ABJOX ABKAS ABKCH ABKTR ABMNI ABMQK ABNWP ABQBU ABSXP ABTEG ABTHY ABTKH ABTMW ABULA ABWNU ABXPI ACBMV ACBRV ACBXY ACBYP ACGFS ACHSB ACHXU ACIGE ACIPQ ACIWK ACKNC ACMDZ ACMLO ACOKC ACOMO ACTTH ACVWB ACWMK ADHHG ADHIR ADINQ ADKNI ADKPE ADMDM ADOXG ADRFC ADTPH ADURQ ADYFF ADZKW AEBTG AEEQQ AEFIE AEFTE AEGAL AEGNC AEJHL AEJRE AEKMD AENEX AEOHA AEPYU AESKC AESTI AETLH AEVLU AEVTX AEXYK AFEXP AFGCZ AFKRA AFLOW AFNRJ AFQWF AFWTZ AFZKB AGAYW AGDGC AGGBP AGGDS AGJBK AGMZJ AGQMX AGWIL AGWZB AGYKE AHAVH AHBYD AHKAY AHSBF AHYZX AIAKS AIIXL AILAN AIMYW AITGF AJBLW AJDOV AJGSW AJRNO AJZVZ AKQUC ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMXSW AMYLF AMYQR AOCGG ARAPS ARCSS ARMRJ ASPBG AVWKF AXYYD AYJHY AZFZN B-. BA0 BBWZM BDATZ BENPR BGLVJ BGNMA CAG CCPQU COF CS3 CSCUP D1I DDRTE DL5 DNIVK DPUIP DU5 EBLON EBS EDO EIOEI EJD ESBYG FEDTE FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC G-Y G-Z G8K GGCAI GGRSB GJIRD GNWQR GQ6 GQ7 GQ8 GXS HCIFZ HF~ HG5 HG6 HMJXF HQYDN HRMNR HVGLF HZ~ I-F I09 IHE IJ- IKXTQ IWAJR IXC IXD IXE IZIGR IZQ I~X I~Y I~Z J-C J0Z JBSCW JCJTX JZLTJ KB. KDC KOV KOW LAK LLZTM M4Y MA- MK~ N2Q N9A NB0 NDZJH NPVJJ NQJWS NU0 O9- O93 O9G O9I O9J OAM OVD P0- P19 P2P P62 P9N PDBOC PT4 PT5 Q2X QF4 QM1 QN7 QO4 QOK QOR QOS R4E R89 R9I RHV RNI RNS ROL RPX RSV RZC RZE RZK S0W S16 S1Z S26 S27 S28 S3B SAP SCG SCLPG SCM SDH SDM SHX SISQX SJYHP SNE SNPRN SNX SOHCF SOJ SPISZ SQXTU SRMVM SSLCW STPWE SZN T13 T16 TEORI TN5 TSG TSK TSV TUS U2A UG4 UNUBA UOJIU UTJUX UZXMN VC2 VFIZW W23 W48 W4F WJK WK8 YLTOR Z45 Z5O Z7R Z7S Z7V Z7W Z7X Z7Y Z7Z Z81 Z83 Z85 Z88 Z8M Z8N Z8P Z8R Z8T Z8W Z8Z Z92 ZMTXR ~EX AACDK AAEOY AAJBT AASML AAYXX ABAKF ACAOD ACDTI ACZOJ AEFQL AEMSY AGJZZ AGQEE AGRTI AIGIU CITATION H13 7SP 7SR 8BQ 8FD AAYZH DWQXO F28 FR3 JG9 L7M PQEST PQQKQ PQUKI
ID	FETCH-LOGICAL-c316t-5c10a592fea31b968dafc9479c4815b2a16cc35656176542c5c1a8270694d8453
IEDL.DBID	8FG
ISSN	0957-4522
IngestDate	Wed Nov 06 08:24:33 EST 2024 Thu Sep 12 16:38:50 EDT 2024 Sat Dec 16 12:03:44 EST 2023
IsPeerReviewed	true
IsScholarly	true
Issue	14
Keywords	Light Switching High Responsivity Solar Illumination Oxygen Vacancy Simulated Sunlight
Language	English
LinkModel	DirectLink
MergedId	FETCHMERGED-LOGICAL-c316t-5c10a592fea31b968dafc9479c4815b2a16cc35656176542c5c1a8270694d8453
PQID	1982270837
PQPubID	326250
PageCount	7
ParticipantIDs	proquest_journals_1982270837 crossref_primary_10_1007_s10854_017_6786_9 springer_journals_10_1007_s10854_017_6786_9
PublicationCentury	2000
PublicationDate	2017-07-01
PublicationDateYYYYMMDD	2017-07-01
PublicationDate_xml	– month: 07 year: 2017 text: 2017-07-01 day: 01
PublicationDecade	2010
PublicationPlace	New York
PublicationPlace_xml	– name: New York
PublicationTitle	Journal of materials science. Materials in electronics
PublicationTitleAbbrev	J Mater Sci: Mater Electron
PublicationYear	2017
Publisher	Springer US Springer Nature B.V
Publisher_xml	– name: Springer US – name: Springer Nature B.V
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SSID	ssj0006438
Score	2.22151
Snippet	The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of...
SourceID	proquest crossref springer
SourceType	Aggregation Database Publisher
StartPage	10205
SubjectTerms	Characterization and Evaluation of Materials Chemistry and Materials Science Doping Irradiation Lattice vacancies Materials Science Nanoparticles Optical and Electronic Materials Photocatalysis Photoelectric effect Photoelectric emission Photovoltaic cells Response time Zinc oxide
SummonAdditionalLinks	– databaseName: SpringerLINK - Czech Republic Consortium dbid: AGYKE link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlZ07T8MwEMdPpV1g4I0oFOSBCeSqdh52xgq1VCBgoVJhiRzHkVBRipp04dPjy6Mtr4E1iS3F59z9Hd_9DHAhvcTGrcShOhAxdQWXVAWYCeArrhIjHb-A6dw_-KOxezvxJg3gy18X6bRb70gWjnqt1k16mDAhqPWvPg02oFXVnbb6N893g6X_tTFWloQ9JHpzXu9l_tbJ12i0kpjfdkWLYDPcKQsAs4JRiDkm0-4ij7r64yfB8R_vsQvblfYk_XKy7EHDpPuwtUYkPABd0owzMktI_43ERTkVmaXE6kQyr_Jp8bgJfCDDZTF5nc-Rb4AGxouxKXyPbaByssgMeUkfSapSuzivcvAOYTwcPF2PaHUOA9UO83PqadZTXsAToxwWBb6MVaIDVwQaSS8RV8zX2kFlyASef6VtAyW5wJraWLqecwTNdJaaYyCGyZ4qGHw6dhPPiiMHPQaXJvIZ0702XNb2CN9L3Ea4AivjyIV25EIcuTBoQ6e2WFh9eVnIEEgorLAUbbiqLbB2-6_OTv719ClscjRhkbfbgWY-X5gzq07y6Lyajp_-MtkY priority: 102 providerName: Springer Nature
Title	Effects of Al doping on the responsivity of solar irradiation of devices that use ZnO nanoparticles
URI	https://link.springer.com/article/10.1007/s10854-017-6786-9 https://www.proquest.com/docview/1982270837
Volume	28
hasFullText	1
inHoldings	1
isFullTextHit
isPrint
link	http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwFA66veiDeMXpHHnwSQkuaZvLk1TZBcUp4mD6UrI0BUG6uXb_35xe3BT0qZA2efhOc86X5OQ7CJ3LIHFxK_GIUSImvmCSaAWZAFwznVjp8UJM52HEh2P_bhJMqg23rEqrrH1i4ajjmYE98isKQnPCEQZxPf8kUDUKTlerEhqbqEmZELD4kv3Btyd20VaWWnug7c1YfapZXp2TAeRfCOLcNSfqZ1xakc1f56NF2Onvop2KL-KwNPAe2rDpPtpeUxE8QKZUIM7wLMHhB46LK1B4lmLH7fCiyoGFEhHwQQZLWfy-WIAmARgFGmNb-AvXQed4mVn8lj7iVKduQV3lzR2icb_3cjskVe0EYjzKcxIY2tWBYonVHp0qLmOdGOULZUCdZco05cZ4wOaogJpVxnXQ0gHMlR9LP_COUCOdpfYYYUtlVxe6eSb2k8ARGg9mOZN2yik13Ra6qJGL5qVERrQSQwaYIwdzBDBHqoXaNbZRNVuyaGXbFrqs8V57_ddgJ_8Pdoq2GBi4SK5to0a-WNozRyHyaaf4TzqoGQ5e73vuedMbPT271jELvwDq78Sl
link.rule.ids	315,783,787,12777,21400,27936,27937,33385,33756,41093,41535,42162,42604,43612,43817,52123,52246,74363,74630
linkProvider	ProQuest
linkToHtml	http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV09T8MwELWgDMCA-BSFAh6YQBZ1nDj2hCpEKdCWpZUQS-Q6joSEkpKk_x-fk9CCBGsSe3gX3z3bd-8QuhRBYuNWwoiWYUz80BNEScgE4MpTiRGMOzGd0ZgPpv7Ta_BaH7gVdVpl4xOdo44zDWfkNxSE5kJLGMLb-SeBrlFwu1q30FhHGz6zsRoqxfsP357YRltRae2BtrfnNbeaVemcCCD_IiTWXXMif8alJdn8dT_qwk5_F-3UfBH3KgPvoTWT7qPtFRXBA6QrBeICZwnufeDYlUDhLMWW2-G8zoGFFhHwQQFbWfye56BJAEaBh7Fx_sIOUCVeFAa_pS84VandUNd5c4do2r-f3A1I3TuBaEZ5SQJNuyqQXmIUozPJRawSLf1QalBnmXmKcq0ZsDkaQs8qbQcoYQHm0o-FH7Aj1Eqz1BwjbKjoKqebp2M_CSyhYbDKPWFmnFLdbaOrBrloXklkREsxZIA5sjBHAHMk26jTYBvVq6WIlrZto-sG75XXf0128v9kF2hzMBkNo-Hj-PkUbXlgbJdo20GtMl-YM0snytm5-2e-AEhCw3A
linkToPdf	http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV07T8MwELagSAgGxFMUCnhgAlnUeTj2hCoglFdhoFLFEjmOIyGhpCTp_8eXOLQgwZrEHu7Od5_jz98hdMr91NSt1CVKBAnxAocTKYAJwKQjU81dVovpPI3YcOzdT_yJ5T-VllbZ5sQ6USe5gn_kFxSE5gIDGIKL1NIiXq7Dy-kngQ5ScNJq22ksoxVTFRnEPA9vv7Oyqby80d0DnW_HaU84m2t03AcuRkBM6mZE_KxRc-D566y0LkHhJtqw2BEPGmdvoSWdbaP1BUXBHaQaNeIS5ykefOCkvg6F8wwbnIcLy4eFdhHwQQnbWvxeFKBPAA6Ch4muc4cZICs8KzV-y55xJjOzubYcul00Dm9er4bE9lEgyqWsIr6ifekLJ9XSpbFgPJGpEl4gFCi1xI6kTCkXkB0NoH-VMgMkN8Zmwku457t7qJPlmd5HWFPel7WGnkq81DfgxoUV73AdM0pVv4vOWstF00YuI5oLI4OZI2PmCMwciS7qtbaN7Mopo7mfu-i8tffC678mO_h_shO0asIlerwbPRyiNQd8XXNue6hTFTN9ZJBFFR_XIfMFixPHqA
openUrl	ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Effects+of+Al+doping+on+the+responsivity+of+solar+irradiation+of+devices+that+use+ZnO+nanoparticles&rft.jtitle=Journal+of+materials+science.+Materials+in+electronics&rft.au=Lin%2C+Yow-Jon&rft.au=Yao-Ming%2C+Chen&rft.date=2017-07-01&rft.pub=Springer+Nature+B.V&rft.issn=0957-4522&rft.eissn=1573-482X&rft.volume=28&rft.issue=14&rft.spage=10205&rft.epage=10211&rft_id=info:doi/10.1007%2Fs10854-017-6786-9&rft.externalDBID=HAS_PDF_LINK
thumbnail_l	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0957-4522&client=summon
thumbnail_m	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0957-4522&client=summon
thumbnail_s	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0957-4522&client=summon