Synthesis and growth of nonlinear infrared crystal material AgGeGaS4 via a new reaction route

High quality nonlinear infrared crystal material AgGeGaS4 with size 30 mm diameter and 80 mm length was grown via reaction of raw materials AgGaS2 and GeS2 directly. The as-prepared products were characterized with X-ray powder diffraction pattern and their optical properties were studied by spectro...

Full description

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 311; no. 5; pp. 1404 - 1406
Main Authors Ni, Youbao, Wu, Haixin, Wang, Zhenyou, Mao, Mingsheng, Cheng, Ganchao, Fei, Huang
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 15.02.2009
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Growth from melts; zone melting and refining
Materials science
Methods of crystal growth; physics of crystal growth
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
Crystal growth
XRD
Silver sulfide
Germanium sulfides
B2. Nonlinear optical materials
A1. Characterization
Absorption coefficients
Transmittance
Gallium sulfide
A2. Bridgman technique
42.79.Nv
Monocrystals
Optical properties
A2. Single-crystal growth
B3. Harmonic generators
Growth mechanism
42.70.Mp
Optical materials
Nonlinear optics
Bridgman method
Crystal growth from melts
Online AccessGet full text

Cover

More Information
Summary:High quality nonlinear infrared crystal material AgGeGaS4 with size 30 mm diameter and 80 mm length was grown via reaction of raw materials AgGaS2 and GeS2 directly. The as-prepared products were characterized with X-ray powder diffraction pattern and their optical properties were studied by spectroscopic transmittance. The absorption coefficient in the region of 6.8-7.8 mum is as low as 0.02 cm-1, also, frequency doubling for 2.79, 8 mum with different lasers was demonstrated successfully. The reaction conditions are easy to be maintained and controlled, which may provide a new method to produce other high-quality AgxGaxGe1-xS2 materials via changing the amount of GeS2.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2008.12.042