Solution growth of n-type β-FeSi2 single crystals using Ni-doped Zn solvent

We have grown low-resistive and n-type beta-FeSi2 single crystals by the temperature gradient solution growth (TGSG) method using Ni-doped Zn solvent. These crystals were obtained at the Ni concentrations between 0.05 and 0.5wt%. Above the Ni concentration of 1.0wt%, nickel silicides were preferably...

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Published inJournal of crystal growth Vol. 292; no. 2; pp. 290 - 293
Main Authors UDONO, Haruhiko, AOKI, Yuta, SUZUKI, Hirokazu, KIKUMA, Isao
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.07.2006
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Growth from solutions
Materials science
Methods of crystal growth; physics of crystal growth
Physics
Temperature dependence
71.20 A1. Characterization
Inorganic compounds
Semiconductor materials
TSSG method
Hall mobility
Transition element compounds
Doping
Binary compounds
Experimental study
Nickel additions
Monocrystals
Quantity ratio
Impurities
A2. Single-crystal growth
81.10
Crystal growth from solutions
Ionization potential
A2. Growth from solution
B1. Semiconducting silicon compound
Carrier density
Iron silicides
Exchange interactions
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Abstract We have grown low-resistive and n-type beta-FeSi2 single crystals by the temperature gradient solution growth (TGSG) method using Ni-doped Zn solvent. These crystals were obtained at the Ni concentrations between 0.05 and 0.5wt%. Above the Ni concentration of 1.0wt%, nickel silicides were preferably grown. The resisitivity of the Ni-doped crystals was 0.2-0.5Omegacm at room temperature (RT). The electron concentration and Hall mobility at RT were (5-6)X1018cm-3 and 3-6cm2/Vs, respectively. We also determined the ionization energy of 26-60meV for the Ni impurity in beta-FeSi2.
AbstractList We have grown low-resistive and n-type beta-FeSi2 single crystals by the temperature gradient solution growth (TGSG) method using Ni-doped Zn solvent. These crystals were obtained at the Ni concentrations between 0.05 and 0.5wt%. Above the Ni concentration of 1.0wt%, nickel silicides were preferably grown. The resisitivity of the Ni-doped crystals was 0.2-0.5Omegacm at room temperature (RT). The electron concentration and Hall mobility at RT were (5-6)X1018cm-3 and 3-6cm2/Vs, respectively. We also determined the ionization energy of 26-60meV for the Ni impurity in beta-FeSi2.
Author UDONO, Haruhiko
KIKUMA, Isao
AOKI, Yuta
SUZUKI, Hirokazu
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  organization: College of Engineering, Ibaraki University, 4-12-1 Nakanarusawa-cho, Hitachi-shi, Ibaraki 316-8511, Japan
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CitedBy_id crossref_primary_10_1088_1742_6596_100_4_042016
crossref_primary_10_1016_j_nimb_2007_01_041
crossref_primary_10_1016_j_physb_2010_08_039
crossref_primary_10_1007_s11664_016_4997_0
crossref_primary_10_1016_j_tsf_2007_02_066
crossref_primary_10_7567_JJAP_54_07JA02
Cites_doi 10.1016/S0040-6090(00)01758-2
10.1016/j.tsf.2004.02.082
10.1016/j.jcrysgro.2004.11.321
10.1063/1.1350996
10.1016/S0022-0248(01)02293-X
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Issue 2
Keywords Temperature dependence
71.20 A1. Characterization
Inorganic compounds
Semiconductor materials
TSSG method
Hall mobility
Transition element compounds
Doping
Binary compounds
Experimental study
Nickel additions
Monocrystals
Quantity ratio
Impurities
A2. Single-crystal growth
81.10
Crystal growth from solutions
Ionization potential
A2. Growth from solution
B1. Semiconducting silicon compound
Carrier density
Iron silicides
Exchange interactions
Language English
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PublicationTitle Journal of crystal growth
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Brehme (10.1016/j.jcrysgro.2006.04.024_bib7) 2001; 89
Heinrich (10.1016/j.jcrysgro.2006.04.024_bib1) 2001; 381
Udono (10.1016/j.jcrysgro.2006.04.024_bib6) 2002; 237–239
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SubjectTerms Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Growth from solutions
Materials science
Methods of crystal growth; physics of crystal growth
Physics
Title Solution growth of n-type β-FeSi2 single crystals using Ni-doped Zn solvent
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